Date of Award
5-2025
Document Type
Thesis
Degree Name
Bachelor of Science
Department
Physics
First Advisor
Dr. Ovidiu Lipan
Second Advisor
Dr. Jack Singal
Abstract
A memristive device has an internal resistance that depends on the history of the applied voltage signal. This dependence gives rise to a pinched hysteresis loop in its current-voltage (I-V) characteristic, a property of resistive switching.
Beyond the crossing at the origin, additional crossings can emerge throughout the loop.
Our computational model simulates the current-voltage response of a memristive device under a sinusoidal voltage. We apply techniques from catastrophe theory to perform parametric analysis, assessing how intrinsic parameters influence the emergence of additional crossings. From there, we introduce a voltage transformation parameter to continuously transition the signal to a symmetric triangular waveform, followed by a second transformation parameter to incorporate asymmetry.
This approach enables us to quantify how variations in the voltage signal and intrinsic device parameters shape its hysteresis. Results demonstrated agreement between crossing numbers predicted by the parameter space regions and those that appeared in corresponding hysteresis responses. Additionally, waveform transformation plots have shown the influence of the voltage signal waveform on changing crossing numbers and positions. Here, we provide a predictive framework for determining the number of crossings, guiding the design of devices tailored for specific functionalities.
Recommended Citation
Neuhaus, Eric, "Tracking the Evolution of Crossings in Memristive Hysteresis Responses" (2025). Honors Theses. 1851.
https://scholarship.richmond.edu/honors-theses/1851
