DOI
10.1063/1.4764902
Abstract
Transport properties of holes in InP nanowires (NWs) were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature, and strain fields. Using molecular dynamics, we simulate NW structures, the longitudinal optical phonon (LO-phonon) energy renormalization, and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the NW size vary. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.
Document Type
Article
Publication Date
11-2012
Publisher Statement
© 2012, American Institute of Physics.This article first appeared in Applied Physics Letters 101,182104 (2012).
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Recommended Citation
Rebello Sousa Dias, M., A. Picinin, V. Lopez-Richard, S.E. Ulloa, L.K. Castelano, J.P. Rino, G.E. Marques. "Tuning hole mobility in InP nanowires," Applied Physics Letters 101,182104 (2012). https://doi.org/10.1063/1.4764902.
